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Synthesis process parameters
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General & Deposition
0- General
1- Deposition
General
Main layer
Chamber
Choose...
K1
K2
K3
K4
K5
K6
K7
K8
KX
Process ID
User info
Operator
Assistant
Problem occured?
No
Yes
Problem description
Initial parameters
Process duration
s
Start vacuum
Torr
End vacuum
Torr
Substrate temperature
℃
Substrate rotation
RPM
Substrate position
°
Table height
mm
Cathode tilt
mm
Gas info
Process gas
Choose...
Ar
N2
Air
Process pressure
mTorr
Process gas flow
sccm
Preheat duration
min
Chambers
Comment
File input
Deposition
Copy from previous step
Copy from previous deposition
Upload
Cathodes materials and power supply
Cathodes parameters
Substrate Bias
Choose...
DC
HiPIMS
RF
Annealing
Start temperature
℃
Process gas
Choose...
Ar
N
None
Process gas flow
sccm
Set temperature
℃
Reactive gas
Choose...
Ar
N
None
Reactive gas flow
sccm
End temperature
℃
Duration
s
Ramp up speed
K/min
Start pressure
Pa
Ramp down speed
K/min
Max pressure
Pa
Comment
General
Main layer
Chamber
Choose...
K1
K2
K3
K4
K5
K6
K7
K8
KX
Process ID
User info
Operator
Assistant
Problem occured?
No
Yes
Problem description
Initial parameters
Process duration
s
Start vacuum
Torr
End vacuum
Torr
Substrate temperature
℃
Substrate rotation
RPM
Substrate position
°
Table height
mm
Cathode tilt
mm
Gas info
Process gas
Choose...
Ar
N2
Air
Process pressure
mTorr
Process gas flow
sccm
Preheat duration
min
Chambers
Comment
File input
Deposition
Copy from previous step
Copy from previous deposition
Upload
Cathodes materials and power supply
Cathodes parameters
Substrate Bias
Choose...
DC
HiPIMS
RF
Annealing
Start temperature
℃
Process gas
Choose...
Ar
N
None
Process gas flow
sccm
Set temperature
℃
Reactive gas
Choose...
Ar
N
None
Reactive gas flow
sccm
End temperature
℃
Duration
s
Ramp up speed
K/min
Start pressure
Pa
Ramp down speed
K/min
Max pressure
Pa
Comment
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